UJ3N120035K3S

onsemi
431-UJ3N120035K3S
UJ3N120035K3S

製造商:

說明:
JFET 1200V/35MOSICJFETG3TO247-3

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 604

庫存:
604 可立即送貨
工廠前置作業時間:
31 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$990.08 NT$990.08
NT$758.88 NT$7,588.80
1,200 報價

商品屬性 屬性值 選擇屬性
onsemi
產品類型: JFET
RoHS:  
SiC
Through Hole
TO-247-3
N-Channel
Single
1.2 kV
20 V
63 A
35 mOhms
429 W
- 55 C
+ 175 C
UJ3N
AEC-Q101
Tube
品牌: onsemi
產品類型: JFETs
原廠包裝數量: 600
子類別: Transistors
公司名稱: SiC JFET
每件重量: 13.633 g
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.