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VSLY5850

Name: Vishay VSLY5850
Brand: Vishay Semiconductors
SKU: 782-VSLY5850
Price: 37.4 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

782-VSLY5850

製造商編號：

VSLY5850

製造商：

Vishay Semiconductors

說明：

紅外發射器 850nm,T-1.75 600mW/sr,+/-3deg.

規格書:

VSLY5850 規格書

ECAD模型:

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庫存量: 9,354

庫存：: 9,354 可立即送貨

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工廠前置作業時間：: 4 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$37.40	NT$37.40
	NT$28.70	NT$287.00
	NT$24.79	NT$2,479.00
	NT$22.58	NT$11,290.00
	NT$21.32	NT$21,320.00
	NT$20.64	NT$41,280.00
	NT$18.19	NT$72,760.00
	NT$18.16	NT$217,920.00

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商品屬性	屬性值	選擇屬性
製造商:	Vishay
產品類型:	紅外發射器
RoHS:
安裝風格:	Through Hole
波長:	850 nm
輻射強度:	600 mW/sr
光束角:	3 deg
If - 順向電流:	100 mA
Vf - 順向電壓:	1.65 V
額定功率:	190 mW
最低工作溫度:	- 40 C
最高工作溫度:	+ 85 C
封裝:	Bulk
品牌:	Vishay Semiconductors
下降時間:	10 ns
照明色彩:	Infrared
透鏡形狀:	Dome
產品類型:	IR Emitters (IR LEDs)
上升時間:	10 ns
原廠包裝數量:	4000
子類別:	Infrared Data Communications
公司名稱:	SurfLight
每件重量:	449.665 mg

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所選屬性: 0

篩選文檔:

規格書

VSLY5850 規格書

Application Notes

Processing Instructions for Mounting of Through-Hole LEDs

Models

PCN

Change of Production Location for 3mm and TELUX Devices (PDF)

REACH Certificate (PDF)

CNHTS:: 8541410090
CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 854141000
TARIC:: 8541410000
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

VSLY850高速紅外線發光二極管

Vishay Semiconductors VSLY850高速IR發光二極管紅外線、850nm發射二極管，它是以GaAlA 表面發射器晶片技術為基礎。Vishay Semiconductors VSLY850高速IR發光二極管有極 高的輻射強度、高光學功率、高速，並模制於透明無色塑料封裝。VSLY3850設有T-1塑料封裝；而VSLY5850有碗碟狀鏡片。