STGWA50IH65DF

Name: STMicroelectronics STGWA50IH65DF
Brand: STMicroelectronics
SKU: 511-STGWA50IH65DF
Price: 165.92 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-STGWA50IH65DF

製造商編號：

STGWA50IH65DF

製造商：

STMicroelectronics

說明：

IGBT Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo

完成您的設計

規格書:

STGWA50IH65DF 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics STGWA50IH65DF的資訊

庫存量: 400

庫存：: 400

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 600

預期2026/3/23
工廠前置作業時間：: 14

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$165.92	NT$165.92
	NT$108.80	NT$1,088.00
	NT$78.54	NT$7,854.00
	NT$69.02	NT$41,412.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-247-3
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	650 V
集電極-發射極飽和電壓:	1.5 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	100 A
Pd - 功率消耗 :	300 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	HB2
封裝:	Tube
品牌:	STMicroelectronics
集電極最大連續電流Ic :	100 A
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	600
子類別:	IGBTs
每件重量:	6.100 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

STGWA50IH65DF 規格書 (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.