700V CoolGaN™ G5 Power Transistors

Infineon Technologies 700V CoolGaN™ G5 Power Transistors represent a significant advancement in power conversion technology. These gallium nitride (GaN) transistors are designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching and minimizing energy losses. The 700V CoolGaN G5 series features enhancement-mode transistors that are normally off, ensuring safe operation and high reliability. With low gate and output charge, these transistors support high power density designs and reduce system BOM costs.

結果: 7
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 1,792庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT N-Channel 1 Channel 700 V - 10 V 1.6 V 1.9 nC - 40 C + 150 C 29 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 4,888庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-TSON-8 HEMT 1 Channel 700 V 13 A 170 mOhms 1.6 V 1.8 nC - 40 C + 150 C 47 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 5,130庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-TSON-8 HEMT 1 Channel 700 V 9.2 A 240 mOhms - 10 V 1.6 V 1.26 nC - 40 C + 150 C 34 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 1,924庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT N-Channel 1 Channel 700 V 240 mOhms - 10 V 1.6 V 1.3 nC - 40 C + 150 C 21 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 1,924庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT N-Channel 1 Channel 700 V 330 mOhms - 10 V 1.6 V 1 nC - 40 C + 150 C 18 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5 1,096庫存量
最少: 1
倍數: 1
: 2,500

SMD/SMT N-Channel 1 Channel 700 V 600 mOhms - 10 V 1.6 V 0.53 nC - 40 C + 150 C 11 W Enhancement CoolGaN
Infineon Technologies 氮化鎵場效應管 CoolGaN Transistor 700 V G5
4,994預期2026/2/23
最少: 1
倍數: 1
: 5,000

SMD/SMT PG-TSON-8 HEMT 1 Channel 700 V 7.2 A 330 mOhms - 10 V 1.6 V 1.8 nC - 40 C + 150 C 28 W Enhancement CoolGaN