IRFB4020PBF

Infineon Technologies
942-IRFB4020PBF
IRFB4020PBF

製造商：

說明：
MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud

規格書:
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庫存量: 2,340

庫存：
2,340
可立即送貨
在途量:
2,000
預期2026/2/25
工廠前置作業時間：
20
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$61.20 NT$61.20
NT$23.19 NT$231.90
NT$23.15 NT$2,315.00
NT$20.06 NT$10,030.00
NT$18.77 NT$18,770.00
NT$17.75 NT$35,500.00
NT$16.80 NT$84,000.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
200 V
18 A
100 mOhms
- 20 V, 20 V
1.8 V
18 nC
- 55 C
+ 175 C
100 W
Enhancement
Tube
品牌: Infineon Technologies
配置: Single
下降時間: 6.3 ns
互導 - 最小值: 24 S
產品類型: MOSFETs
上升時間: 12 ns
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 16 ns
標準開啟延遲時間: 7.8 ns
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

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