STD80N240K6

Name: STMicroelectronics STD80N240K6
Brand: STMicroelectronics
SKU: 511-STD80N240K6
Price: 175.78 TWD
Availability: InStock

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Mouser 編號：

511-STD80N240K6

製造商編號：

STD80N240K6

製造商：

STMicroelectronics

說明：

MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

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規格書:

STD80N240K6 規格書 (PDF)

ECAD模型:

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庫存量: 364

庫存：: 364

可立即送貨

發生意外錯誤了。請稍後再試。
在途量:: 2,500

預期2026/8/17
工廠前置作業時間：: 13

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個2500）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$175.78	NT$175.78
	NT$128.86	NT$1,288.60
	NT$104.04	NT$10,404.00
	NT$92.48	NT$46,240.00
	NT$79.22	NT$79,220.00
完整捲（訂購多個2500）
	NT$79.22	NT$198,050.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	800 V
Id - C連續漏極電流:	16 A
Rds On - 漏-源電阻:	220 Ohms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	25.9 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	105 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	STMicroelectronics
產品類型:	MOSFETs
原廠包裝數量:	2500
子類別:	Transistors
每件重量:	330 mg

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所選屬性: 0

篩選文檔:

規格書

STD80N240K6 規格書 (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STD80N240K6 800V 16A MDmesh K6 Power MOSFET

STMicroelectronics STD80N240K6 800V 16A MDmesh™ K6 Power MOSFET offers an excellent R_DS(on) x area and a low total gate charge (Q_g), enabling high switching speeds and low losses. An integrated ESD protection diode increases the overall ruggedness of the STD80N240K6 MOSFET up to Human Body Model (HBM) Class 2. The MDmesh K6 MOSFETs have a reduced threshold voltage compared with the previous MDmesh K5 generation, enabling a lower driving voltage and thus reducing power losses and gaining efficiency mainly for zero-watt standby applications. The STD80N240K6 is optimized for lighting applications based on flyback topology, such as LED drivers and HID lamps. The device is also ideal for adapters and power supplies for flat-panel displays.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.