IS66WVC2M16ECLL-7010BLI-TR

ISSI
870-WVC2M16E7010BLIT
IS66WVC2M16ECLL-7010BLI-TR

製造商:

說明:
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
14 週 工廠預計生產時間。
最少: 2500   多個: 2500
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
完整捲(訂購多個2500)
NT$152.32 NT$380,800.00

備用包裝

製造商 元件編號:
包裝:
供貨情況:
庫存量
價格:
NT$194.48
最小值:
1

商品屬性 屬性值 選擇屬性
ISSI
產品類型: SRAM
RoHS:  
Reel
品牌: ISSI
濕度敏感: Yes
產品類型: SRAM
系列: IS66WVC2M16EALL
原廠包裝數量: 2500
子類別: Memory & Data Storage
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8542320000
CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.