D5F1GM9 High-Speed QSPI NAND Flash

GigaDevice D5F1GM9 High-Speed QSPI NAND Flash features breakthrough read speeds and innovative Bad Block Management (BBM) functionality. The GD5F1GM9 series combines NOR Flash's high-speed read performance with NAND Flash's large capacity and cost-effectiveness. These innovations address slow response times and vulnerability to bad block interference associated with traditional SPI NAND Flash. This high-speed QSPI NAND Flash is built on a 24nm process node. The series supports 3V and 1.8V operating voltages along with high-speed read modes. The GigaDevice GD51GM9 is ideal for fast-boot applications in sectors such as security, industrial, and the Internet of Things (IoT).

結果: 12
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 封裝
GigaDevice GD5F1GM9REBIGY
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 4,800
倍數: 4,800

Tray
GigaDevice GD5F1GM9REWIGR
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9REYIGR
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9UEBIGY
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 4,800
倍數: 4,800

Tray
GigaDevice GD5F1GM9UEWIGR
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9UEYIGR
GigaDevice NAND快閃 無庫存前置作業時間 12 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9REBJGY
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 4,800
倍數: 4,800

Tray
GigaDevice GD5F1GM9REWJGR
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9REYJGR
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9UEBJGY
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 4,800
倍數: 4,800

Tray
GigaDevice GD5F1GM9UEWJGR
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 3,000
倍數: 3,000
: 3,000

Reel
GigaDevice GD5F1GM9UEYJGR
GigaDevice NAND快閃 無庫存前置作業時間 16 週
最少: 3,000
倍數: 3,000
: 3,000

Reel