M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

結果: 8
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
封裝
STMicroelectronics IGBT Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
規格書
1,116庫存量
最少： 1
倍數： 1

Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
規格書
108庫存量
1,000預期2026/9/21
最少： 1
倍數： 1

Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
規格書
產品評論
467庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
規格書
產品評論
374庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
規格書
158庫存量
600預期2026/11/16
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
規格書
597預期2026/6/23
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
規格書
1,593預期2026/9/7
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
規格書
592預期2026/12/21
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube