RF6L025BGTCR

ROHM Semiconductor
755-RF6L025BGTCR
RF6L025BGTCR

製造商:

說明:
MOSFET SOT363 N-CH 60V 2.5A

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,956

庫存:
2,956 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$23.12 NT$23.12
NT$14.25 NT$142.50
NT$9.15 NT$915.00
NT$6.94 NT$3,470.00
NT$6.22 NT$6,220.00
完整捲(訂購多個3000)
NT$5.13 NT$15,390.00
NT$4.73 NT$28,380.00
NT$4.22 NT$37,980.00
NT$4.05 NT$97,200.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
SOT-363T-6
N-Channel
1 Channel
60 V
2.5 A
91 mOhms
- 20 V, 20 V
2.5 V
3.1 nC
- 55 C
+ 150 C
1 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 3.1 ns
互導 - 最小值: 1.3 S
產品類型: MOSFETs
上升時間: 4.8 ns
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 13 ns
標準開啟延遲時間: 5.3 ns
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RF6L025BG Power MOSFET

ROHM Semiconductor RF6L025BG Power MOSFET features 60V drain-source voltage (VDSS) and ±2.5A continuous drain current (ID). This N-channel MOSFET offers 91mΩ low on-resistance (RDS(on)) and power dissipation of 1W (PD). The RF6L025BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, small surface mount package (TUMT6 or SOT-363T). This RoHS-compliant device incorporates Pb-free plating. The RF6L025BG power MOSFET is suitable for switching, motor drives, and DC/DC converter applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.