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RF3L05150CB4

Name: STMicroelectronics RF3L05150CB4
Brand: STMicroelectronics
SKU: 511-RF3L05150CB4
Price: 7044.17 TWD
Availability: OutOfStock

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Mouser 編號：

511-RF3L05150CB4

製造商編號：

RF3L05150CB4

製造商：

STMicroelectronics

說明：

RF MOSFET晶體管 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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規格書:

RF3L05150CB4 規格書 (PDF)

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	RF MOSFET晶體管
RoHS:
晶體管極性:	N-Channel
技術:	Si
Id - C連續漏極電流:	2.5 A
Vds - 漏-源擊穿電壓:	28 V
Rds On - 漏-源電阻:	1 Ohms
操作頻率:	945 MHz
增益:	16 dB
輸出功率:	150 W
最高工作溫度:	+ 200 C
安裝風格:	Through Hole
封裝/外殼:	LBB-4
封裝:	Reel
封裝:	Cut Tape
品牌:	STMicroelectronics
通道數:	1 Channel
產品類型:	RF MOSFET Transistors
原廠包裝數量:	100
子類別:	MOSFETs
類型:	RF Power MOSFET
每件重量:	2.400 g

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篩選文檔:

規格書

RF3L05150CB4 規格書 (PDF)

合規守則

USHTS:: 8541290055
TARIC:: 8541290000
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

RF3L05150CB4 RF Power LDMOS Transistor

STMicroelectronics RF3L05150CB4 RF Power LDMOS Transistor is a 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. The STM RF3L05150CB4 LDMOS Transistor is designed for applications with frequencies from HF to 1GHz. The RF3L05150CB4 can be used in class AB, B, or C for all typical modulation formats.

LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.