UCC27444QDGNRQ1

Texas Instruments
595-UCC27444QDGNRQ1
UCC27444QDGNRQ1

製造商:

說明:
閘極驅動器 Automotive 4-A dual- channel low-side ga

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,494

庫存:
3,494 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$45.22 NT$45.22
NT$32.95 NT$329.50
NT$29.85 NT$746.25
NT$26.45 NT$2,645.00
NT$24.82 NT$6,205.00
NT$23.87 NT$11,935.00
NT$22.20 NT$22,200.00
NT$21.66 NT$86,640.00
NT$21.39 NT$160,425.00

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: 閘極驅動器
RoHS:  
Automotive High-Speed Gate Drivers
Low-Side
SMD/SMT
HVSSOP-8
2 Driver
2 Output
4 A, 4 A
4.5 V
18 V
Non-Inverting
11 ns
7 ns
- 40 C
+ 125 C
UCC27444
品牌: Texas Instruments
邏輯類型: CMOS, TTL
運作供電電流: 45 mA
輸出電壓: 0 V to 18 V
產品類型: Gate Drivers
傳輸延遲 - 最大值: 50 ns, 52 ns
關機: No Shutdown
原廠包裝數量: 2500
子類別: PMIC - Power Management ICs
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8542391090
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC27442-Q1 High-Speed Low-Side Gate Driver

Texas Instruments UCC27442-Q1 Dual-Channel High-Speed Low-Side Gate Driver can drive MOSFET and GaN power switches effectively. UCC27442-Q1 has a typical peak drive strength of 4A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27442-Q1 fast propagation delay (18ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27444/UCC27444-Q1 4A Low-Side Gate Driver

Texas Instrument UCC27444/UCC27444-Q1 4A Low-Side Gate Driver is a high-speed, dual-channel, low-side gate driver that effectively drives MOSFET and GaN power switches. UCC27444/UCC27444-Q1 has a typical peak drive strength of 4A, which reduces the rise and fall times of the power switches, increases efficiency, and lowers switching losses. The device’s fast propagation delay (18ns typical) yields better power stage efficiency by improving the pulse width utilization, deadtime optimization, control loop response, and transient performance of the system.