|
|
碳化矽MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
NT$782.25
-
736庫存量
-
NRND
|
Mouser 元件編號
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SIC_DISCRETE
|
|
736庫存量
|
|
|
NT$782.25
|
|
|
NT$542.77
|
|
|
NT$509.79
|
|
|
NT$509.43
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
NT$398.65
-
323庫存量
-
NRND
|
Mouser 元件編號
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
323庫存量
|
|
|
NT$398.65
|
|
|
NT$281.78
|
|
|
NT$234.82
|
|
|
NT$209.01
|
|
|
NT$177.46
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
NT$191.44
-
675庫存量
-
3,000在途量
|
Mouser 元件編號
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
675庫存量
3,000在途量
在途量:
1,000 預期2026/8/26
2,000 預期2026/10/7
|
|
|
NT$191.44
|
|
|
NT$99.66
|
|
|
NT$90.70
|
|
|
NT$80.30
|
|
|
NT$75.64
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
NT$263.50
-
80庫存量
-
240在途量
-
NRND
|
Mouser 元件編號
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
80庫存量
240在途量
|
|
|
NT$263.50
|
|
|
NT$153.08
|
|
|
NT$140.53
|
|
|
NT$131.57
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
NT$523.41
-
71庫存量
-
1,680預期2026/9/1
-
NRND
|
Mouser 元件編號
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
71庫存量
1,680預期2026/9/1
|
|
|
NT$523.41
|
|
|
NT$315.12
|
|
|
NT$307.23
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
NT$648.89
-
2,160在途量
-
NRND
|
Mouser 元件編號
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
NT$648.89
|
|
|
NT$494.37
|
|
|
NT$411.92
|
|
|
NT$366.75
|
|
|
NT$347.39
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
NT$340.22
-
無庫存前置作業時間 52 週
-
NRND
|
Mouser 元件編號
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
無庫存前置作業時間 52 週
|
|
|
NT$340.22
|
|
|
NT$239.48
|
|
|
NT$169.21
|
|
|
NT$154.16
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
臺灣