|
|
碳化矽MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
NT$845.34
-
735庫存量
-
NRND
|
Mouser 元件編號
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SIC_DISCRETE
|
|
735庫存量
|
|
|
NT$845.34
|
|
|
NT$680.07
|
|
|
NT$595.83
|
|
|
NT$585.43
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
NT$252.74
-
370庫存量
|
Mouser 元件編號
726-IMW120R140M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
370庫存量
|
|
|
NT$252.74
|
|
|
NT$171.72
|
|
|
NT$141.97
|
|
|
NT$135.87
|
|
|
NT$131.57
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
NT$567.86
-
1,234庫存量
-
NRND
|
Mouser 元件編號
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,234庫存量
|
|
|
NT$567.86
|
|
|
NT$397.94
|
|
|
NT$339.14
|
|
|
NT$307.95
|
|
|
檢視
|
|
|
NT$292.89
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
NT$460.67
-
29庫存量
-
240在途量
-
NRND
|
Mouser 元件編號
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
29庫存量
240在途量
|
|
|
NT$460.67
|
|
|
NT$273.18
|
|
|
NT$232.31
|
|
|
NT$202.19
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
NT$216.53
-
10,930預期2026/7/9
|
Mouser 元件編號
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10,930預期2026/7/9
|
|
|
NT$216.53
|
|
|
NT$141.97
|
|
|
NT$104.32
|
|
|
NT$92.85
|
|
|
NT$82.46
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
NT$660.36
-
2,160在途量
|
Mouser 元件編號
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
NT$660.36
|
|
|
NT$436.65
|
|
|
NT$377.14
|
|
|
NT$366.75
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
NT$331.61
-
無庫存前置作業時間 52 週
-
NRND
|
Mouser 元件編號
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
無庫存前置作業時間 52 週
|
|
|
NT$331.61
|
|
|
NT$218.33
|
|
|
NT$169.21
|
|
|
NT$162.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
臺灣