STF10LN80K5

Name: STMicroelectronics STF10LN80K5
Brand: STMicroelectronics
SKU: 511-STF10LN80K5
Price: 122.74 TWD
Availability: InStock

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Mouser 編號：

511-STF10LN80K5

製造商編號：

STF10LN80K5

製造商：

STMicroelectronics

說明：

MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

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規格書:

STF10LN80K5 規格書 (PDF)

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庫存量: 654

庫存：: 654 可立即送貨

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工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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總價:

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估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$122.74	NT$122.74
	NT$64.26	NT$642.60
	NT$58.14	NT$5,814.00
	NT$50.32	NT$25,160.00
	NT$42.50	NT$42,500.00
	NT$40.46	NT$80,920.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	800 V
Id - C連續漏極電流:	8 A
Rds On - 漏-源電阻:	630 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	15 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	25 W
通道模式:	Enhancement
公司名稱:	MDmesh
品牌:	STMicroelectronics
配置:	Single
下降時間:	13 ns
產品類型:	MOSFETs
上升時間:	10 ns
系列:	STF10LN80K5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	28 ns
標準開啟延遲時間:	11.8 ns
每件重量:	2 g

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篩選文檔:

規格書

STF10LN80K5 規格書 (PDF)

PCN

Product Change Notification 2024-04-02 (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

STF10LN80K5 MDmesh™ Power MOSFET

STMicroelectronics STF10LN80K5 MDmesh™ Power MOSFET is designed using MDmesh™ K5 technology. This technology is based on an innovative proprietary vertical structure that reduces on-resistance and ultra-low gate charge for various applications. This STF10LN80K5 Power MOSFET has a built-in Zener diode that enhances the Electrostatic Discharge (ESD) performance of the device. The Zener voltage of the device eliminates the need for additional external componentry by facilitating cost-effective device integrity protection. The STF10LN80K5 Power MOSFET is ideal for switching applications.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.