600V CoolMOS P7功率晶體管

Infineon 600V CoolMOS P7功率晶體管是第7代裝置並採用適用於高電壓功率MOSFETs的革新性技術。該晶體管根據超結(SJ)原則設計而成,由Infineon Technologies率先製造。600V CoolMOS P7綜合快速開關SJ MOSFET的益處與卓越易用性於一體。600V P7擁有極低的響鈴趨勢、可承受繁重交換任務的卓越體二晶體堅固性,以及出色的防靜電性能。極低的開關和傳導損失使開關應用更高效、纖巧和更低溫。
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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET HIGH POWER_NEW 864庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 3,132庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,847庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 382庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 917庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms - 20 V, 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 5,962庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 12,380庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,722庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 218 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 59 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,032庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 10 A 310 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 46 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 298庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,520庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 55 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 4,188庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms - 20 V, 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,333庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,993庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 6,880庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 7,098庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 906庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 727庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,594庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 4,057庫存量
1,500預期2026/7/9
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,073庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 61 A 45 mOhms - 20 V, 20 V 1.7 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,806庫存量
最少: 1
倍數: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 3,494庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 5,347庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 3,156庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel