CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

結果: 30
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
Infineon Technologies 碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
規格書
1,918庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
641庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
329庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
規格書
352庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 4.7 A 350 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
437庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
434庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
規格書
3,472庫存量
3,000預期2026/10/22
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
686庫存量
1,000預期2026/7/23
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
934庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
1,868庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
規格書
1,269庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
規格書
657庫存量
240預期2026/7/16
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
規格書
228庫存量
720預期2026/7/30
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
規格書
369庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
1,240庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
455庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
規格書
480預期2026/7/2
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
規格書
16庫存量
720在途量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
規格書
375庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
規格書
26庫存量
960預期2026/9/17
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
規格書
187庫存量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
規格書
43庫存量
1,920在途量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
342庫存量
最少： 1
倍數： 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
18庫存量
1,200在途量
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
11庫存量
240預期2026/12/31
最少： 1
倍數： 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC