BFR 193 E6327

Infineon Technologies
726-BFR193E6327
BFR 193 E6327

製造商:

說明:
RF雙極結體管 NPN RF Transistor 12V 80mA 580mW

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庫存:
暫無庫存
工廠前置作業時間:
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少: 15000   多個: 15000
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個3000)
此產品免費航運

Pricing (TWD)

數量 單價
總價
完整捲(訂購多個3000)
NT$4.49 NT$67,350.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Infineon
產品類型: RF雙極結體管
RoHS:  
BFR193
Bipolar
Si
NPN
8 GHz
70
12 V
2 V
80 mA
- 65 C
+ 150 C
Single
SMD/SMT
SOT-23
AEC-Q100
Reel
品牌: Infineon Technologies
集電極最大直流電流: 80 mA
Pd - 功率消耗 : 580 mW
產品類型: RF Bipolar Transistors
原廠包裝數量: 3000
子類別: Transistors
零件號別名: BFR193E6327XT SP000011056 BFR193E6327HTSA1
每件重量: 60 mg
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所選屬性: 0

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CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541219000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.