CoolMOS® Power Transistors

Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

結果: 6
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 8 週
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 257 mOhms - 20 V, 20 V 4 V 118 nC - 55 C + 150 C 277.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 17 週
最少: 1
倍數: 1

Si Through Hole TO-220FP-3 1 Channel 650 V 22.4 A 351 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 34.7 W Tube
Infineon Technologies MOSFET LOW POWER_LEGACY 無庫存前置作業時間 19 週
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 11.4 A 730 mOhms - 20 V, 20 V 4 V 41 nC - 55 C + 150 C 104.2 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 16 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.5 A 190 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 無庫存前置作業時間 18 週
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 43.3 A 80 mOhms - 20 V, 20 V 4 V 167 nC - 55 C + 150 C 391 W Enhancement Tube

Infineon Technologies MOSFET LOW POWER_LEGACY 無庫存前置作業時間 14 週
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.7 A 420 mOhms - 20 V, 20 V 3.5 V 31.5 nC - 55 C + 150 C 83.3 W Enhancement CoolMOS Tube