R60xx PrestoMOS™ High-Voltage MOSFETs

ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. These ROHM devices combine high-speed switching with an internal diode and high reverse recovery time (trr) characteristics for optimized efficiency and lower loss while contributing to smaller designs.

結果: 73
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 24A 3rd Gen, Low Noise
規格書
300庫存量
最少： 1
倍數： 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 24 A 165 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 120 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 42A 3rd Gen, Fast Recover
規格書
135庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 104 mOhms - 30 V, 30 V 7 V 100 nC - 55 C + 150 C 495 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 15A 3rd Gen, Fast Switch
規格書
279庫存量
最少： 1
倍數： 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 15 A 315 mOhms - 20 V, 20 V 5 V 27.5 nC - 55 C + 150 C 60 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise
規格書
3庫存量
最少： 1
倍數： 1

Si Through Hole TO-247G-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 35A 3rd Gen, Fast Switch
規格書
270庫存量
最少： 1
倍數： 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 35 A 115 mOhms - 20 V, 20 V 5 V 72 nC - 55 C + 150 C 102 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 7A 3rd Gen, Fast Recover
規格書
1,570庫存量
最少： 1
倍數： 1
捲: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 7 A 780 mOhms - 30 V, 30 V 7 V 17.5 nC - 55 C + 150 C 96 W Enhancement PrestoMOS Reel, Cut Tape
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 4A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000
捲: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 4 A 1.43 Ohms - 30 V, 30 V 5 V 10.5 nC - 55 C + 150 C 60 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 6A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000
捲: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 6 A 936 mOhms - 30 V, 30 V 5 V 15.5 nC - 55 C + 150 C 86 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 7A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000
捲: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 600 V 7 A 780 mOhms - 30 V, 30 V 7 V 17.5 nC - 55 C + 150 C 96 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 15A 3rd Gen, Low Noise
規格書
無庫存前置作業時間 20 週
最少： 1
倍數： 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 15 A 290 mOhms - 20 V, 20 V 4 V 40 nC - 55 C + 150 C 120 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 76 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 20 週
最少： 600
倍數： 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 252 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 20A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 20 週
最少： 300
倍數： 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 20 A 234 mOhms - 30 V, 30 V 7 V 45 nC - 55 C + 150 C 76 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 25A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 25 A 182 mOhms - 30 V, 30 V 7 V 57 nC - 55 C + 150 C 85 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 25A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 20 週
最少： 600
倍數： 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 182 mOhms - 30 V, 30 V 7 V 57 nC - 55 C + 150 C 306 W Enhancement PrestoMOS Tube
ROHM Semiconductor MOSFET 600V Vdss; 95W Pd PrestoMOS; 30A
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000
捲: 1,000

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 30 A 143 mOhms - 30 V, 30 V 7 V 74 nC + 150 C 95 W Enhancement PrestoMOS Reel
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 30A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 20 週
最少： 1
倍數： 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 30 A 143 mOhms - 30 V, 30 V 7 V 74 nC - 55 C + 150 C 93 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise
規格書
無庫存前置作業時間 18 週
最少： 1,000
倍數： 1,000
捲: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 245 W Enhancement Reel
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 24A 3rd Gen, Low Noise
規格書
無庫存前置作業時間 20 週
最少： 300
倍數： 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 74 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 30A 3rd Gen, Low Noise
規格書
無庫存前置作業時間 20 週
最少： 300
倍數： 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 140 mOhms - 20 V, 20 V 4 V 90 nC - 55 C + 150 C 86 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 30A 3rd Gen, Fast Switch
規格書
無庫存前置作業時間 20 週
最少： 600
倍數： 600

Si Through Hole TO-247G-3 N-Channel 1 Channel 650 V 30 A 140 mOhms - 20 V, 20 V 5 V 56 nC - 55 C + 150 C 305 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 650V 35A 3rd Gen, Low Noise
規格書
無庫存前置作業時間 20 週
最少： 300
倍數： 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 35 A 115 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 150 C 102 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 6A 3rd Gen, Fast Recover
規格書
無庫存前置作業時間 18 週

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 6 A 936 mOhms - 30 V, 30 V 7 V 15.5 nC - 55 C + 150 C 86 W Enhancement Reel