SCT4013DRC15

Name: ROHM Semiconductor SCT4013DRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4013DRC15
Price: 1181.84 TWD
Availability: InStock

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Mouser 編號：

755-SCT4013DRC15

製造商編號：

SCT4013DRC15

製造商：

ROHM Semiconductor

說明：

碳化矽MOSFET TO247 750V 105A N-CH SIC

規格書:

SCT4013DRC15 規格書

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庫存：: 402 可立即送貨

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工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

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單價:

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總價:

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Pricing (TWD)

數量	單價	總價
	NT$1,181.84	NT$1,181.84
	NT$906.78	NT$9,067.80
	NT$871.76	NT$87,176.00
	NT$871.08	NT$391,986.00
900	報價

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	750 V
Id - C連續漏極電流:	105 A
Rds On - 漏-源電阻:	16.9 mOhms
Vgs - 閘極-源極電壓:	- 4 V, + 21 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	170 nC
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	312 W
通道模式:	Enhancement
品牌:	ROHM Semiconductor
配置:	Single
下降時間:	17 ns
互導 - 最小值:	32 S
封裝:	Tube
產品:	MOSFET's
產品類型:	SiC MOSFETS
上升時間:	32 ns
原廠包裝數量:	450
子類別:	Transistors
技術:	SiC
晶體管類型:	1 N-Channel
標準斷開延遲時間:	82 ns
標準開啟延遲時間:	17 ns
零件號別名:	SCT4013DR

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規格書

SCT4013DRC15 規格書

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.