RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

結果: 6
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
封裝
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT
規格書
497庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 25A, Field Stop Trench IGBT
規格書
721庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
規格書
870庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10s Short-Circuit Tolerance, 1200V 15A, Field Stop Trench IGBT
規格書
886庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 40A, FRD Built-in, Field Stop Trench IGBT
規格書
849庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT
規格書
238庫存量
最少： 1
倍數： 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C Tube