AFV10700GSR5

NXP Semiconductors
771-AFV10700GSR5
AFV10700GSR5

製造商:

說明:
RF MOSFET晶體管 Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

ECAD模型:
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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
10 週 工廠預計生產時間。
最少: 50   多個: 50
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
完整捲(訂購多個50)
NT$27,344.16 NT$1,367,208.00

商品屬性 屬性值 選擇屬性
NXP
產品類型: RF MOSFET晶體管
RoHS:  
N-Channel
Si
2.6 A
105 V
1.03 GHz to 1.09 GHz
19.2 dB
700 W
- 55 C
+ 150 C
SMD/SMT
NI-780GS-4L
Reel
品牌: NXP Semiconductors
通道數: 2 Channel
Pd - 功率消耗 : 526 W
產品類型: RF MOSFET Transistors
系列: AFV10700
原廠包裝數量: 50
子類別: MOSFETs
類型: RF Power MOSFET
Vgs - 閘極-源極電壓: + 10 V
Vgs th - 門源門限電壓 : 2.3 V
零件號別名: 935362013178
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所選屬性: 0

USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

AFV10700H RF Power LDMOS Transistor

NXP Semiconductors AFV10700H RF Power LDMOS Transistor is designed for pulse applications operating at 1030MHz to 1090MHz. This LDMOS Transistor can also be used over the 960MHz to 1215MHz band at reduced power. This device is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME, and other complex pulse chains.