IXGN50N120C3H1

Name: IXYS IXGN50N120C3H1
Brand: IXYS
SKU: 747-IXGN50N120C3H1
Price: 881.62 TWD
Availability: OutOfStock

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Mouser 編號：

747-IXGN50N120C3H1

製造商編號：

IXGN50N120C3H1

製造商：

IXYS

說明：

IGBT 模組 High Frequency Range >40khz CIGBT w/Diode

規格書:

IXGN50N120C3H1 規格書

ECAD模型:

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工廠前置作業時間：: 32 週工廠預計生產時間。

此產品已報告長備貨期。

輸入數量：

最少： 300 多個： 10

單價:

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總價:

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Pricing (TWD)

數量	單價	總價
	NT$881.62	NT$264,486.00

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	IGBT 模組
RoHS:
產品:	IGBT Modules
集電極-發射極最大電壓VCEO:	1.2 kV
連續集電極電流在25 C:	95 A
柵射極漏電電流:	100 nA
Pd - 功率消耗 :	460 W
封裝/外殼:	SOT-227B-4
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
封裝:	Tube
品牌:	IXYS
柵極發射機最大電壓:	20 V
安裝風格:	Screw Mount
產品類型:	IGBT Modules
系列:	IXGN50N120
原廠包裝數量:	10
子類別:	IGBTs
技術:	Si
公司名稱:	GenX3

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規格書

IXGN50N120C3H1 規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

GenX3™ Insulated-Gate Bipolar Transistors (IGBTs)

IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs) are PT (Punch Through) manufactured using a robust HDMOS IGBT process. The 600V GenX3 components are optimized for high-current applications requiring soft-switching frequencies upwards of 200kHz and hard-switching frequencies of 40kHz. The 600V IGBTs provide higher surge current capabilities, a lower saturation voltage, and lower energy losses offering designers a viable option for switching applications at the 600V range. The 1200V GenX3 IGBTs offer lower saturation voltages, lower switching losses, and higher surge current capabilities. The 1200V models are aimed at the high-voltage power conversion market.

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