IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (TWD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Technology Packaging
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module 17In Stock
NT$5,036.57
NT$4,857.68
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 6In Stock
NT$9,867.35
NT$7,893.45
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module 29In Stock
NT$6,260.13
NT$6,185.20
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 51In Stock
NT$7,812.43
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module 11In Stock
50Expected 11/6/2026
NT$9,170.43
NT$7,407.69
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module 5In Stock
20Expected 5/6/2027
NT$4,499.89
NT$4,250.38
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
This product may require additional documentation to export from the United States.
Non-Stocked Lead-Time 39 Weeks
NT$46,461.60
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies IGBT Modules PP IHM I
This product may require additional documentation to export from the United States.
Non-Stocked Lead-Time 39 Weeks
NT$47,795.22
Min.: 3
Mult.: 3
Si Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
NT$6,679.21
Min.: 10
Mult.: 10
IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Si Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module Non-Stocked Lead-Time 24 Weeks
NT$8,442.32
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Si Tray