RGE Field Stop Trench IGBTs

ROHM Semiconductor RGE Field Stop Trench IGBTs feature low collector-emitter saturation voltage, low switching loss, and a short circuit withstand time of 5μs. The  ROHM Semiconductor RGE IGBTs ensure reliable operation under high-stress conditions. The built-in fast and soft recovery FRD enhances efficiency, while Pb-free lead plating ensures RoHS compliance. Perfect for general inverters, Uninterruptible Power Supply (UPS) systems, power conditioners, and welders, the RGE series provides a robust solution for modern power management needs.

結果: 4
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
封裝
ROHM Semiconductor IGBT 5 s Short-Circuit Tolerance, 650V 50A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
規格書
570庫存量
最少： 1
倍數： 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 74 A 230 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 5 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
規格書
590庫存量
最少： 1
倍數： 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 51 A 166 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 5 s Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
規格書
600庫存量
最少： 1
倍數： 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 63 A 200 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 5 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
規格書
600庫存量
最少： 1
倍數： 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 102 A 306 W - 40 C + 175 C Tube