OptiMOS™ 5 Linear FET 2 MOSFETs

Infineon Technologies OptiMOS™ 5 Linear FET 2 MOSFETs are optimized for hot-swap and e-fuse applications, offering exceptional performance with very low on-resistance RDS(on) and a wide safe operating area (SOA). These N-channel, normal-level MOSFETs are 100% avalanche-tested for reliability and feature Pb-free lead plating, ensuring RoHS compliance. Additionally, the MOSFETs are halogen-free by IEC61249-2-21 standards, making them eco-friendly for demanding applications.

結果: 3
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET IFX FET >80 - 100V 5,674庫存量
2,000預期2026/3/2
最少: 1
倍數: 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 100 V 321 A 1.6 mOhms - 20 V, 20 V 3.9 V 165 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 1,699庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 100 V 243 A 2.1 mOhms - 20 V, 20 V 3.9 V 115 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint
12,730在途量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT N-Channel 1 Channel 100 V 284 A 1.7 mOhms 20 V 3.45 V 142 nC - 55 C + 175 C 349 W Enhancement OptiMOS Reel, Cut Tape, MouseReel