SBR15U50SP5-13

Name: Diodes Incorporated SBR15U50SP5-13
Brand: Diodes Incorporated
SKU: 621-SBR15U50SP5-13
Price: 35.02 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

621-SBR15U50SP5-13

製造商編號：

SBR15U50SP5-13

製造商：

Diodes Incorporated

說明：

肖特基二極體及整流器 15A SBR SUPER BARRIER RECTIFIER

規格書:

SBR15U50SP5-13 規格書 (PDF)

ECAD模型:

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庫存量: 8,546

庫存：: 8,546 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 24 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個5000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$35.02	NT$35.02
	NT$23.97	NT$239.70
	NT$14.79	NT$1,479.00
	NT$12.99	NT$6,495.00
	NT$12.95	NT$12,950.00
	NT$12.72	NT$31,800.00
完整捲（訂購多個5000）
	NT$10.57	NT$52,850.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	肖特基二極體及整流器
RoHS:
REACH - SVHC:
產品:	Schottky Rectifiers
安裝風格:	SMD/SMT
封裝/外殼:	PowerDI5-3
配置:	Single Dual Anode
技術:	Si
If - 順向電流:	15 A
Vrrm - 重複反向電壓:	50 V
Vf - 順向電壓:	520 mV
Ifsm - 順向浪湧電流:	256 A
Ir - 反向電流:	500 uA
最低工作溫度:	- 65 C
最高工作溫度:	+ 150 C
系列:	SBR15U5
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Diodes Incorporated
產品類型:	Schottky Diodes & Rectifiers
原廠包裝數量:	5000
子類別:	Diodes & Rectifiers
公司名稱:	POWERDI
Vr - 反向電壓:	50 V
每件重量:	96 mg

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所選屬性: 0

篩選文檔:

規格書

SBR15U50SP5-13 規格書 (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

15A Super Barrier Rectifier

Diodes Incorporated 15A Super Barrier Rectifier delivers a very low forward voltage with excellent reverse leakage stability at high temperatures. Diodes Incorporated 15A Super Barrier Rectifier is ideal for thin applications, with a 1.1mm case height and a thermally efficient package. Applications include rectification, freewheeling, or as a polarity protection diode.

SBR® Super Barrier Rectifiers

Diodes Inc SBR^® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.