OptiMOS™ 8 Power MOSFETs

Infineon Technologies OptiMOS™ 8 Power MOSFETs are N-channel, normal level 80V (ISC016N08NM8 and ISC016N08NM8SC) or 100V (ISC019N10NM8SC) MOSFETs with very low on-resistance [RDS(ON)]. The ISC016N08NM8SC and ISC019N10NM8SC are available in dual-sided cooled packages (WSON-8) while the ISC016N08NM8 comes in a standard TDSON-8 package. Each package offers superior thermal resistance and is 100% avalanche tested. Infineon Technologies OptiMOS™ 8 Power MOSFETs feature a soft-recovery diode and are lead-free, halogen-free, and RoHS-compliant.

結果: 9
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V in SuperSO8 package 220庫存量
5,000預期2027/6/10
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 100 V 150 A 3.33 mOhms - 20 V, 20 V 3.2 V 59 nC - 55 C + 175 C 179 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V in D2PAK 700庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-3 N-Channel 1 Channel 100 V 176 A 1.76 mOhms - 20 V, 20 V 3.2 V 160 nC - 55 C + 175 C 357 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V in D2PAK-7 350庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 321 A 1.42 mOhms - 20 V, 20 V 3.2 V 160 nC - 55 C + 175 C 357 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V l in SuperSO8 package 497庫存量
5,000預期2027/5/31
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 100 V 245 A 1.93 mOhms - 20 V, 20 V 3.2 V 106 nC - 55 C + 175 C 268 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V in TOLL 1庫存量
4,000在途量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 484 A 0.93 mOhms - 20 V, 20 V 3.2 V 255 nC - 55 C + 175 C 500 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 Power MOSFET, 80 V
15,400在途量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 80 V 268 A 1.54 mOhms 20 V 3.5 V 76 nC - 55 C + 175 C 263 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 power MOSFET 100 V in D2PAK-7
1,000在途量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 408 A 0.94 mOhms - 20 V, 20 V 3.2 V 255 nC - 55 C + 175 C 500 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 Power MOSFET, 80 V
4,000預期2026/10/22
最少: 1
倍數: 1
: 4,000

Si SMD/SMT PG-WSON-8 N-Channel 1 Channel 80 V 269 A 1.54 mOhms 20 V 3.5 V 76 nC - 55 C + 175 C 263 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 8 PowerMOSFET, 100 V
942在途量
最少: 1
倍數: 1
: 4,000

Si SMD/SMT PG-WSON-8 N-Channel 1 Channel 100 V 245 A 1.93 mOhms 20 V 3.2 V 106 nC - 55 C + 175 C 268 W Enhancement OptiMOS Reel, Cut Tape