QPC1005

Qorvo
772-QPC1005
QPC1005

製造商：

說明：
RF 開關 IC 50W 0.15-2.8GHz GaN SPDT

規格書:
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庫存量: 18

庫存：
18 可立即送貨
工廠前置作業時間：
24 週 工廠預計生產時間數量大於所顯示的數量。
數量超過18會受到最小訂單要求的限制。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$5,818.42 NT$5,818.42
NT$4,181.32 NT$104,533.00
完整捲（訂購多個100）
NT$3,590.06 NT$359,006.00

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: RF 開關 IC
RoHS:  
SPDT
150 MHz
2.8 GHz
0.7 dB
29 dB
- 40 C
+ 85 C
SMD/SMT
QFN-24
GaN
QPC1005
Reel
Cut Tape
品牌: Qorvo
高控制電壓: - 50 V
濕度敏感: Yes
開關數: Single
運作供電電流: 3 mA
Pd - 功率消耗 : 12 W
產品類型: RF Switch ICs
原廠包裝數量: 100
子類別: Wireless & RF Integrated Circuits
零件號別名: QPC1005SR
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所選屬性: 0

規格書

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CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
5A991.g

QPC1005 Single-Pole, Double–Throw (SPDT) Switch

Qorvo QPC1005 Single-Pole, Double–Throw (SPDT) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1005 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This switch maintains a low insertion loss of less than 0.7dB and greater than 30dB isolation, making it ideal for high-power switching applications across defense and commercial platforms. The Qorvo QPC1005 is offered in a 4mm x 4mm plastic overmolded QFN package.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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