NVMFS5830NLWFT1G-UM

Name: onsemi NVMFS5830NLWFT1G-UM
Brand: onsemi
SKU: 863-FS5830NLWFT1G-UM
Price: 69.91 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

863-FS5830NLWFT1G-UM

製造商編號：

NVMFS5830NLWFT1G-UM

製造商：

onsemi

說明：

MOSFET NFET SO8FL 40V 172A 2.3M0

壽命週期:

新產品:

該製造商的新產品。

規格書:

NVMFS5830NLWFT1G-UM 規格書

ECAD模型:

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庫存量: 1,050

庫存：: 1,050 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 22 週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1 上限： 150

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$69.91	NT$69.91
	NT$47.32	NT$473.20
	NT$39.79	NT$3,979.00
完整捲（訂購多個1500）
	NT$39.79	NT$59,685.00

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DFN-5
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	40 V
Id - C連續漏極電流:	185 A
Rds On - 漏-源電阻:	2.3 mOhms
Vgs - 閘極-源極電壓:	20 V
Vgs th - 門源門限電壓 :	2.4 V
Qg - 閘極充電:	113 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	158 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
品牌:	onsemi
配置:	Single
下降時間:	27 ns
互導 - 最小值:	38 S
產品類型:	MOSFETs
上升時間:	32 ns
系列:	NVMFS5830NL
原廠包裝數量:	1500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	40 ns
標準開啟延遲時間:	22 ns

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所選屬性: 0

篩選文檔:

規格書

NVMFS5830NLWFT1G-UM 規格書

合規守則

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 馬來西亞
封裝原產國:: 馬來西亞
擴散國:: 中國台灣

出貨時，國家可能會有所變更。

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ R_DS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

NVMFS5830NL Single N-Channel Power MOSFET

onsemi NVMFS5830NL Single N-Channel Power MOSFET is a high-efficiency power MOSFET designed for demanding power management applications. Utilizing advanced trench technology, the onsemi NVMFS5830NL delivers exceptionally low R_DS(on) performance (2.3mΩ at V_GS = 10V), making the MOSFET ideal for minimizing conduction losses in high-current systems. The 5mm x 6mm x 1mm, flat-lead SO-8FL package enhances thermal performance and board space efficiency, while the low gate charge and fast switching characteristics contribute to improved overall system efficiency. A wettable flank option is available for enhanced optical inspection. With the combination of high current capability, low switching losses, and a compact footprint, the NVMFS5830NL is well-suited for use in motor control applications and high-/low-side load switches.

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low R_DS(on) to minimize conduction losses and low Q_G and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.