STY112N65M5

STMicroelectronics
511-STY112N65M5
STY112N65M5

製造商：

說明：
MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5
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庫存：
暫無庫存
工廠前置作業時間：
16 週 工廠預計生產時間。
最少： 600   多個： 600
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$981.92 NT$589,152.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
Max247-3
N-Channel
1 Channel
650 V
96 A
19 mOhms
- 25 V, 25 V
4 V
350 nC
- 55 C
+ 150 C
625 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
產品類型: MOSFETs
系列: Mdmesh M5
原廠包裝數量: 600
子類別: Transistors
晶體管類型: 1 N-Channel
每件重量: 5 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412999
ECCN:
EAR99

MDmesh M5 Power MOSFETs

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 

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