BSM300D12P2E001

ROHM Semiconductor
755-BSM300D12P2E001
BSM300D12P2E001

製造商：

說明：
MOSFET模組 300A SiC Power Module

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庫存：
0

您仍可購買此商品作為延期交貨訂單。

在途量:
4
預期2026/2/17
工廠前置作業時間：
27
週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$26,191.56 NT$26,191.56
NT$25,104.92 NT$301,259.04

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET模組
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
300 A
- 6 V, + 22 V
2.7 V
- 40 C
+ 150 C
1.875 kW
BSMx
Bulk
品牌: ROHM Semiconductor
配置: Dual
下降時間: 65 ns
高度: 15.4 mm
長度: 152 mm
產品類型: MOSFET Modules
上升時間: 70 ns
原廠包裝數量: 4
子類別: Discrete and Power Modules
類型: SiC Power Module
標準斷開延遲時間: 250 ns
標準開啟延遲時間: 80 ns
Vr - 反向電壓: 1.2 kV
寬度: 62 mm
每件重量: 444.780 g
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所選屬性: 0

CNHTS:
8504409100
CAHTS:
8541590000
USHTS:
8541590080
JPHTS:
854159000
TARIC:
8541590000
MXHTS:
8541500100
BRHTS:
85415020
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

BSM300D12P2E001 SiC Power Module

ROHM Semiconductor BSM300D12P2E001 SiC Power Module is a half-bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. ROHM Semiconductor BSM300D12P2E001 SiC Power Module is designed for motor drives, inverter/converters, photovoltaics, energy harvesting, and induction heating equipment. It has low surge, low switching loss and high-speed switching are possible.

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