CoolMOS™ 7超級結MOSFET

Infineon Technologies CoolMOS™ 7超級結MOSFET在能源效率、功率密度和使用便利性奠定新標準。CoolMOS 7技術採用創新的封裝概念與各種技術,係專為特定應用最佳化。CoolMOS 7 MOSFETS可用來縮小電動車充電站體積,提高其輸出,加快充電速度。CoolMOS 7的推出,使新一代的配接器和充電器體積更為輕巧、效率更優異。有了CoolMOS 7,將幫助工程師推出成本更低、效率更高的再生能源系統。

結果: 195
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET LOW POWER_NEW 363庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 22 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1,795庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 185庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 97庫存量
最少: 1
倍數: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 73庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 125 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 473庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 377庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 913庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 958庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 506庫存量
最少: 1
倍數: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1,597庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 770庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1,699庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms - 30 V, 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 263庫存量
12,500預期2026/4/16
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 3,012庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 95庫存量
7,500預期2026/3/2
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 600 mOhms - 20 V, 20 V 3.5 V 9 nC - 40 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 21庫存量
最少: 1
倍數: 1
: 1,700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 47 A 50 mOhms - 20 V, 20 V 3 V 68 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 307庫存量
3,000預期2026/9/3
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms - 20 V, 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 15A VSON-4 71庫存量
3,000預期2026/7/2
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 15 A 115 mOhms - 20 V, 20 V 3 V 35 nC - 40 C + 150 C 102 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4,741庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 3,298庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 40 C + 150 C 6.9 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 2,227庫存量
3,000預期2026/3/25
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4 A 1.2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 3,958庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 2.5 A 2 Ohms - 30 V, 30 V 3.5 V 7.5 nC - 55 C + 150 C 500 mW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 83庫存量
500預期2026/5/29
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 120 mOhms - 20 V, 20 V 3 V 34 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 648庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube