onsemi Silicon Photomultipliers (SiPMs) feature high gain, fast timing, and excellent PDE with practical advantages associated with solid state technology (SST). These onsemi SiPMs offer a fast output terminal and are manufactured using a CMOS process. The SiPMs have a breakdown voltage uniformity of ±250mV across all sensors in a product line, a low-temperature coefficient of 21mV/°C, and <30V bias voltage. These SiPMs are ideal for medical imaging, hazard and threat, 3D ranging and imaging, and high energy physics.
