結果: 9
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET LOW POWER_NEW 27,823庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 4 A 2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 3,340庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 14 A 450 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 104 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 921庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 14 A 450 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,110庫存量
最少: 1
倍數: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 52 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 4,801庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,774庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 30,505庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 1,678庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 516庫存量
最少: 1
倍數: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Tube