ART LDMOS RF Power Transistors

Ampleon Advanced Rugged Technology (ART) LDMOS RF Power Transistors are designed to cover a wide range of applications for ISM, broadcast, and communications. These power transistors feature dual-sided ESD protection, enabling class C operation and complete switch-off. The ART LDMOS RF power transistors offer high efficiency, excellent thermal stability, and excellent ruggedness with no device degradation. These power transistors feature nominal output powers of 35W and 2500W. The ART LDMOS RF power transistors are ideal for industrial, scientific, medical, broadcast, and radar applications.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 晶體管極性 技術 Vds - 漏-源擊穿電壓 Rds On - 漏-源電阻 操作頻率 增益 輸出功率 最高工作溫度 安裝風格 封裝/外殼 封裝


Ampleon RF MOSFET晶體管 ART35FE/SOT467C/TRAY 237庫存量
最少: 1
倍數: 1

N-Channel LDMOS 65 V 1.6 Ohms 1 MHz to 650 MHz 31 dB 35 W + 225 C Screw Mount SOT467C-3 Tray
Ampleon RF MOSFET晶體管 ART2K5TPU/OMP-1230-6F/T&R 無庫存前置作業時間 16 週
最少: 100
倍數: 100
: 100

Dual N-Channel LDMOS 75 V 106 mOhms 1 MHz to 400 MHz 28..5 dB 2.5 kW + 225 C SMD/SMT OMP-1230-6F-2-7 Reel