HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

電晶體的類型
變更類別視圖
結果: 28
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS 產品類型
技術
安裝風格
封裝/外殼
晶體管極性
STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
規格書
531庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
規格書
2,329庫存量
可選用MouseReel
最少： 1
倍數： 1
捲: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel


STMicroelectronics IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
規格書
564庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
規格書
597庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
規格書
461庫存量
可選用MouseReel
最少： 1
倍數： 1
捲: 1,000

IGBT Transistors Si SMD/SMT H2PAK-2
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT
規格書
1,402庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gte FieldStop IGBT 650V 80A
規格書
4,575庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
規格書
802庫存量
可選用MouseReel
最少： 1
倍數： 1
捲: 1,000

IGBT Transistors Si SMD/SMT

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
規格書
722庫存量
可選用MouseReel
最少： 1
倍數： 1
捲: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB series IGBT
規格書
90庫存量
600預期2026/8/24
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 60A trench gate field-stop IGBT
規格書
6庫存量
1,200預期2026/2/17
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
規格書
406庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
規格書
496庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
規格書
1庫存量
600預期2026/4/1
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB series IGBT
規格書
470庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
規格書
848庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3P-3
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGBT
規格書
311庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT Trench gate H series 650V 80A HiSpd
規格書
74庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3P


STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high speed HB series IGBT
規格書
290庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBT Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
規格書
42庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-4
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGB
規格書
219庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT 650V 40A Trench Gate Field-Stop IGBT
規格書
600預期2026/2/10
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
規格書
無庫存前置作業時間 14 週
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 650V 60A Trench Gate Field-Stop IGBT
規格書
前置作業時間 14 週
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
規格書
前置作業時間 14 週
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3