TGS2355-SM

Qorvo
772-TGS2355-SM
TGS2355-SM

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說明：
RF 開關 IC .5-6GHz SPDT 100 Watt GaN

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庫存量: 229

庫存：
229 可立即送貨
工廠前置作業時間：
12 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$7,298.44 NT$7,298.44
NT$5,460.40 NT$54,604.00
500 報價

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: RF 開關 IC
RoHS:  
SPDT
500 MHz
6 GHz
1.1 dB
40 dB
- 40 C
+ 85 C
SMD/SMT
QFN-32
Si
TGS2355
Tray
品牌: Qorvo
高控制電壓: - 48 V
濕度敏感: Yes
開關數: Single
運作供電電流: 1 mA
Pd - 功率消耗 : 35 W
產品類型: RF Switch ICs
原廠包裝數量: 50
子類別: Wireless & RF Integrated Circuits
零件號別名: TGS2355 1097064
每件重量: 5.058 g
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

TGS2355-SM High Power GaN Switch

Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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