TGS2355

Qorvo
772-TGS2355
TGS2355

製造商：

說明：
RF 開關 IC .5-6GHz SPDT 100 Watt GaN

規格書:
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供貨情況

庫存：
暫無庫存
工廠前置作業時間：
12 週 工廠預計生產時間。
最少： 50   多個： 50
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$5,023.84 NT$251,192.00
100 報價

備用包裝

製造商 元件編號:
TGS2355-SM
包裝:
Tray
供貨情況:
庫存量
價格:
NT$7,298.44
最小值:
1

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: RF 開關 IC
RoHS:  
SPDT
500 MHz
6 GHz
1.3 dB
40 dB
- 55 C
+ 150 C
SMD/SMT
Die
Si
TGS2355
Gel Pack
品牌: Qorvo
高控制電壓: - 48 V
開關數: Single
運作供電電流: 1 mA
Pd - 功率消耗 : 36.8 W
產品類型: RF Switch ICs
原廠包裝數量: 50
子類別: Wireless & RF Integrated Circuits
零件號別名: 1097157
每件重量: 1 g
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所選屬性: 0 

                        
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5-0810-13

規格書

PCN

此功能需要啟用JavaScript。

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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