UG3SC120009K4S

onsemi
431-UG3SC120009K4S
UG3SC120009K4S

製造商:

說明:
JFET 1200V/9MOSICFETDGG3TO

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 615

庫存:
615 可立即送貨
工廠前置作業時間:
31 週 工廠預計生產時間數量大於所顯示的數量。
數量超過615會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$2,471.14 NT$2,471.14
NT$2,020.86 NT$20,208.60

商品屬性 屬性值 選擇屬性
onsemi
產品類型: JFET
RoHS:  
SiC
Through Hole
TO-247-4
N-Channel
Single
1.2 kV
- 25 V to 25 V
6 uA
120 A
7.6 mOhms
789 W
- 55 C
+ 175 C
UG3S
Tube
品牌: onsemi
產品類型: JFETs
原廠包裝數量: 600
子類別: Transistors
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

合規守則
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原產地分類
原產國:
菲律賓
封裝原產國:
菲律賓
擴散國:
美國
出貨時,國家可能會有所變更。

UG3SC 1200V 7.6mΩ Combo-FET

onsemi UG3SC 1200V 7.6mΩ Combo-FET combines a 1200V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package. This design enables a normally off switch while utilizing the advantages of a normally on SiC JFET. The UG3SC Combo-FET from onsemi offers ultra-low on-resistance [RDS(on)] for reduced conduction losses and the robustness needed for high-energy switching in circuit protection applications.

Combo-FETs

onsemi Combo-FETs are revolutionary devices that combine a low RDS(on) onsemi SiC JFET with a Si MOSFET in a single, compact package. Explicitly designed for low-frequency protection applications, such as solid-state circuit breakers, battery disconnects, and surge protection, these Combo-FETs allow users access to the JFET gate to optimize the design. Integrating the Si MOSFET in these onsemi Combo-FETs ensures a normally off solution, achieving a size reduction of over 25% compared to discrete implementations.