RS1G201ATTB1

ROHM Semiconductor
755-RS1G201ATTB1
RS1G201ATTB1

製造商:

說明:
MOSFET HSOP8 P-CH 40V 20A

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 6,413

庫存:
6,413 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$60.18 NT$60.18
NT$57.46 NT$574.60
NT$55.08 NT$5,508.00
NT$48.28 NT$24,140.00
NT$44.54 NT$44,540.00
完整捲(訂購多個2500)
NT$39.10 NT$97,750.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
HSOP-8
P-Channel
1 Channel
40 V
78 A
5.2 mOhms
- 20 V, 20 V
1 V
130 nC
+ 150 C
40 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 250 ns
產品類型: MOSFETs
上升時間: 98 ns
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 P Channel
標準斷開延遲時間: 330 ns
標準開啟延遲時間: 24 ns
零件號別名: RS1G201AT
每件重量: 771.020 mg
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

RS1G201ATTB1 Power MOSFET

ROHM Semiconductor RS1G201ATTB1 Power MOSFET features Pb-free plating, low on-resistance, and HSOP8 small surface-mount package. This MOSFET operates at -55°C to 150°C temperature range, -40V drain-source voltage, ±80A pulsed drain current, and ±20V gate-source voltage. The RS1G201ATTB1 power MOSFET is ideal for use in load switching.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.