R6049YN N-Channel Power MOSFETs

ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.

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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
封裝
ROHM Semiconductor MOSFET Nch 600V 49A, TO-220AB, Power MOSFET: R6049YNX3 is a power MOSFET with low on - resistance, suitable for switching.
規格書
1,253庫存量
1,000預期2026/9/14
最少： 1
倍數： 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 49 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 448 W Enhancement Tube
ROHM Semiconductor MOSFET Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching.
規格書
1,964庫存量
最少： 1
倍數： 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 22 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 90 W Enhancement Tube
ROHM Semiconductor MOSFET Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching.
規格書
無庫存前置作業時間 26 週
最少： 1
倍數： 1

Si Through Hole TO-247G-3 N-Channel 1 Channel 600 V 49 A 82 mOhms - 30 V, 30 V 6 V 65 nC - 55 C + 150 C 448 W Enhancement Tube