結果: 577
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 封裝/外殼 安裝風格 配置 集電極-發射極最大電壓VCEO 集電極-發射極飽和電壓 柵極發射機最大電壓 連續集電極電流在25 C Pd - 功率消耗 最低工作溫度 最高工作溫度 系列 封裝
IXYS IGBT 75 Amps 1200V
583在途量
最少: 1
倍數: 1

Si SOT-227B-4 Screw Mount Single 1.2 kV 2.2 V - 20 V, 20 V 150 A 660 W - 40 C + 150 C IXDN75N120 Tube
IXYS IGBT TO264 2500V 75A IGBT
300在途量
最少: 1
倍數: 1

Si TO-264 Through Hole Single 2.5 kV 2.7 V - 20 V, 20 V 170 A 780 W - 55 C + 150 C Tube
IXYS IGBT ISOPLUS 4500V 38A IGBT
293預期2026/4/24
最少: 1
倍數: 1

Si Through Hole Single 4.5 kV 3.3 V - 20 V, 20 V 90 A 417 W - 55 C + 150 C High Voltage Tube
IXYS IGBT High Voltage XPT IGBT
660預期2026/7/14
最少: 1
倍數: 1
Si TO-247-PLUS-HV-3 Through Hole Single 4.5 kV 3.9 V - 20 V, 20 V 95 A 660 W - 55 C + 150 C Tube
IXYS IGBT IGBT BIMSFT-VERY HIV OLT
300預期2026/8/13
最少: 1
倍數: 1

Si SMD/SMT Single 3 kV 2.7 V - 20 V, 20 V 38 A 200 W - 55 C + 150 C Very High Voltage Tube

IXYS IGBT TO247 3KV 12A IGBT
300預期2026/4/1
最少: 1
倍數: 1

Si TO-247-3 Through Hole Single 3 kV 3.2 V - 20 V, 20 V 30 A 160 W - 55 C + 150 C Very High Voltage Tube

IXYS IGBT 75 Amps 1600V 2.5 Rds
299預期2026/7/28
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 1.6 kV 2.5 V - 20 V, 20 V 75 A 300 W - 55 C + 150 C IXGH25N160 Tube

IXYS IGBT 72 Amps 1700 V 3.3 V Rds
180預期2026/9/2
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 1.7 kV 3.3 V - 20 V, 20 V 75 A 350 W - 55 C + 150 C IXGH32N170 Tube

IXYS IGBT VRY HI VOLT NPT IGBT 1700V, 72A
570預期2026/8/10
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 1.7 kV 5 V - 20 V, 20 V 32 A 350 W - 55 C + 150 C IXGH32N170 Tube

IXYS IGBT 60 Amps 600V
280預期2026/5/15
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 600 V 2.2 V 20 V 75 A 380 W - 55 C + 150 C IXGH60N60 Tube
IXYS IGBT GenX3 600V IGBT
270預期2026/3/13
最少: 1
倍數: 1

Si TO-264-3 Through Hole Single 600 V 2 V 20 V 500 A 1.7 kW - 55 C + 150 C IXGK320N60 Tube
IXYS IGBT 30 Amps 1200V
300預期2026/2/23
最少: 1
倍數: 1

Si Through Hole Single 1.2 kV 3.5 V - 20 V, 20 V 60 A 300 W - 55 C + 150 C IXGP30N120 Tube

IXYS IGBT PLUS247 650V 140A SN DIO
300預期2026/4/17
最少: 1
倍數: 1

Si TO-247-3 Through Hole Single 650 V 1.9 V - 20 V, 20 V 340 A 1.2 kW - 55 C + 175 C Trench Tube
IXYS IGBT TO263 1200V 20A XPT
1,416預期2026/10/28
最少: 1
倍數: 1

Si TO-263HV-3 SMD/SMT Single 1.2 kV 1.9 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C Trench Tube
IXYS IGBT 900V 24A 2.7V XPT IGBT GenX3 w/ Diode
281預期2026/6/16
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 900 V 3 V - 20 V, 20 V 44 A 200 W - 55 C + 150 C Planar Tube
IXYS IGBT 650V/80A XPT Copacked TO-247
242預期2026/4/10
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 650 V 2.35 V - 20 V, 20 V 80 A 300 W - 55 C + 175 C IXYH40N65 Tube
IXYS IGBT XPT IGBT C3-Class 1200V/160A
330預期2026/2/23
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.2 V - 20 V, 20 V 200 A 1.25 kW - 55 C + 150 C IXYH82N120 Tube
IXYS IGBT TO263 2500V 8A XPT
300在途量
最少: 1
倍數: 1

Si TO-247HV-3 Through Hole Single 2.5 kV 4 V - 20 V, 20 V 29 A 280 W - 55 C + 175 C Tube
IXYS IGBT SOT227 650V 100A GENX3
300預期2026/8/12
最少: 1
倍數: 1

Si Screw Mount Single 650 V 1.8 V - 20 V, 20 V 170 A 600 W - 55 C + 175 C Planar Tube
IXYS IGBT TO247 2500V 40A IGBT
309預期2026/4/30
最少: 1
倍數: 1

Si TO-247-PLUS-3 Through Hole Single 2.5 kV 4 V - 20 V, 20 V 154 A 1.5 kW - 55 C + 175 C Tube
IXYS IGBT 26 Amps 1700V 3.5 V Rds
297預期2026/10/1
最少: 1
倍數: 1

Si ISOPLUS i4-PAC-3 Through Hole Single 1.7 kV 3.5 V - 20 V, 20 V 44 A 200 W - 55 C + 150 C IXGF32N170 Tube
IXYS IGBT High Voltage IGBT 2500V; 19A
272預期2026/6/19
最少: 1
倍數: 1

Si ISOPLUS i4-PAC-3 Through Hole Single 2.5 kV 3.2 V - 20 V, 20 V 32 A 250 W - 55 C + 150 C IXLF19N250 Tube

IXYS IGBT TO247 1200V 60A IGBT
180預期2026/3/27
最少: 1
倍數: 1

- 20 V, 20 V Tube

IXYS IGBT 75 Amps 600V 1.05 V Rds
300預期2026/8/21
最少: 1
倍數: 1

Si TO-247AD-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 48 A 300 W - 55 C + 150 C IXGH48N60 Tube
IXYS IGBT TO220 600V 48A GENX3
296預期2026/10/5
最少: 1
倍數: 1

Si TO-220-3 Through Hole Single 600 V 1.18 V - 20 V, 20 V 120 A 300 W - 55 C + 150 C Tube