SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low RDS(on). These power MOSFETs offer 30V VDS and very low RDS x Qg Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A ID and 19.9nC Qg. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A ID and 21nC Qg. This 100% Rg and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.

結果: 4
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Vishay / Siliconix MOSFET PWRPK 100V N-CH MOSFET 1,882庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT PowerPAK-4 N-Channel 1 Channel 100 V 277 A 1.89 mOhms - 20 V, 20 V 4 V 85 nC - 55 C + 175 C 333 W Enhancement Reel, Cut Tape
Vishay / Siliconix MOSFET P-CHANNEL 60-V (D-S) MOSFET 8,917庫存量
5,825預期2026/3/23
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SO-8 P-Channel 1 Channel 60 V 90.9 A 7 mOhms - 20 V, 20 V 2.6 V 31.7 nC - 55 C + 150 C 104 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET PPAK1212 N-CH 30V 51.1A 19,141庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerPAK-1212-8S N-Channel 1 Channel 30 V 185.6 A 1.06 mOhms - 12 V, 16 V 2.2 V 47.5 nC - 55 C + 150 C 65.7 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET PPAK1212 N-CH 30V 47.1A 4,098庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerPAK1212-8S N-Channel 1 Channel 30 V 162 A 1.2 mOhms - 12 V, 16 V 4.2 V 65 nC - 55 C + 150 C 57 W Enhancement TrenchFET Reel, Cut Tape, MouseReel