STripFET III™ Power MOSFETs

STMicroelectronics STripFET III™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with a gate structure. The resulting STripFET Power MOSFET exhibits a high current and low RDS(on). These STripFET Power MOSFETs have improved specific on-resistance for lower conduction losses. The planar technology used in these devices is ideal for high-efficiency, low-voltage systems.

結果: 6
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
STMicroelectronics MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in 701庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-6 N-Channel 1 Channel 40 V 200 A 1.1 mOhms - 20 V, 20 V 4 V 120 nC - 55 C + 150 C 365 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100V 3.9 mOhm 180A STripFET 1,072庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 100 V 120 A 4.5 mOhms - 20 V, 20 V 4 V 114.6 nC - 55 C + 175 C 315 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III 4,789庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 2 Channel 60 V 20 A 43 mOhms - 20 V, 20 V 1 V 8.7 nC - 55 C + 175 C 52 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Dual N-Ch 100V 7.8A 25mOhm STripFET III 前置作業時間 13 週
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 2 Channel 100 V 20 A 35 mOhms - 20 V, 20 V 1 V 20.5 nC - 55 C + 175 C 70 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III 1,338庫存量
3,000預期2026/3/3
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 100 V 7.8 A 25 mOhms - 20 V, 20 V 1 V 20.5 nC - 55 C + 175 C 70 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 packa 678庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 120 A 3.2 mOhms - 20 V, 20 V 2.5 V 42 nC - 55 C + 175 C 136 W Enhancement STripFET Tube