NTTFS1D8N02P1E

onsemi
863-NTTFS1D8N02P1E
NTTFS1D8N02P1E

製造商:

說明:
MOSFET FET 25V 1.8 MOHM PC33 SINGLE

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 501

庫存:
501 可立即送貨
工廠前置作業時間:
24 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$109.82 NT$109.82
NT$71.74 NT$717.40
NT$49.98 NT$4,998.00
NT$42.50 NT$21,250.00
NT$40.80 NT$40,800.00
完整捲(訂購多個3000)
NT$39.78 NT$119,340.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PQFN-8
N-Channel
1 Channel
25 V
150 A
1.3 mOhms
- 12 V, 16 V
2 V
17.1 nC
- 55 C
+ 150 C
46 W
Enhancement
Reel
Cut Tape
品牌: onsemi
組裝國家: Not Available
擴散國: Not Available
原產國: PH
產品類型: MOSFETs
系列: NTTFS1D8N02P1E
原廠包裝數量: 3000
子類別: Transistors
每件重量: 122.136 mg
找到產品:
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

NTTFS1D8N02P1E N-Channel Power MOSFET

onsemi NTTFS1D8N02P1E N-Channel Power MOSFET features a compact design and good thermal performance. This MOSFET offers low drain-to-source resistance (RDS(on)) to minimize conduction losses and low total gate charge (QG) and capacitance to minimize driver losses. onsemi NTTFS1D8N02P1E MOSFET provides 25V drain-to-source voltage (V(BR)DSS) and 150A maximum drain current (ID). Typical applications include DC-DC converters, power load switches, notebook battery management, motor control, secondary rectification, battery management, and Point of Load (POL).