FGH40N60SMD

Name: onsemi FGH40N60SMD
Brand: onsemi
SKU: 512-FGH40N60SMD
Price: 177.14 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

512-FGH40N60SMD

製造商編號：

FGH40N60SMD

製造商：

onsemi

說明：

IGBT 600V, 40A Field Stop IGBT

規格書:

FGH40N60SMD 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 10,154

庫存：: 10,154 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 11 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$177.14	NT$177.14
	NT$108.80	NT$1,088.00
	NT$89.76	NT$10,771.20
	NT$83.98	NT$42,829.80

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	IGBT
RoHS:
REACH - SVHC:
技術:	Si
封裝/外殼:	TO-247
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	600 V
集電極-發射極飽和電壓:	1.9 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	80 A
Pd - 功率消耗 :	349 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
系列:	FGH40N60SMD
封裝:	Tube
品牌:	onsemi
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
柵射極漏電電流:	+/- 400 nA
產品類型:	IGBT Transistors
原廠包裝數量:	30
子類別:	IGBTs
每件重量:	6.390 g

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所選屬性: 0

篩選文檔:

規格書

FGH40N60SMD 規格書

Models

FGH40N60SMD Symbol & Footprint by SnapMagic

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGH40N60SMD場闌IGBT

Fairchild Semiconductor FGH40N60SMD場闌IGBT電晶體使用Fairchild的新研發場闌IGBT技術，能夠為必須保持低傳導和切換損失的太陽能逆變器、UPS、焊接器及SMPS應用提供最佳性能表現。Fairchild Semiconductor FGH40N60SMD場闌IGBT電晶體具有高電流、低飽和電壓、高輸入阻抗和快速切換能力。