RJ1N04BBHTL1

ROHM Semiconductor
755-RJ1N04BBHTL1
RJ1N04BBHTL1

製造商:

說明:
MOSFET Nch 80V 100A, TO-263AB, Power MOSFET

壽命週期:
新產品:
該製造商的新產品。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 772

庫存:
772 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$144.84 NT$144.84
NT$95.20 NT$952.00
NT$71.40 NT$7,140.00
NT$63.24 NT$31,620.00
完整捲(訂購多個800)
NT$56.10 NT$44,880.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
TO-263AB-3
N-Channel
1 Channel
80 V
100 A
5.3 mOhms
20 V
4 V
46 nC
- 55 C
+ 150 C
89 W
Enhancement
Reel
Cut Tape
品牌: ROHM Semiconductor
配置: Single
下降時間: 38 ns
互導 - 最小值: 20 S
產品類型: MOSFETs
上升時間: 14 ns
原廠包裝數量: 800
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 65 ns
標準開啟延遲時間: 30 ns
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RJ1N04BBH N-Ch Power MOSFET

ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET offers an 80V drain-source voltage with low on-resistance. The device features a ±100A continuous drain current and 89W power dissipation. The RJ1N04BBH is suitable for many applications, including switching, motor drives, and DC/DC converters. The ROHM RJ1N04BBH MOSFET is available in a high-power TO263AB package.

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I2C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I2C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.