NDSH10120C-F155

onsemi
863-NDSH10120C-F155
NDSH10120C-F155

製造商：

說明：
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於onsemi NDSH10120C-F155的資訊

庫存量: 1,266

庫存：
1,266 可立即送貨
工廠前置作業時間：
13 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$215.90 NT$215.90
NT$150.28 NT$1,502.80
NT$102.34 NT$10,234.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
12 A
1.2 kV
1.75 V
546 A
200 uA
- 55 C
+ 175 C
NDSH10120C-F155
Tube
品牌: onsemi
Pd - 功率消耗 : 94 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 450
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 1.2 kV
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

NDSH10120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH10120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。