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DMTH6010LK3Q-13

Name: Diodes Incorporated DMTH6010LK3Q-13
Brand: Diodes Incorporated
SKU: 621-DMTH6010LK3Q-13
Price: 76.72 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

621-DMTH6010LK3Q-13

製造商編號：

DMTH6010LK3Q-13

製造商：

Diodes Incorporated

說明：

MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A

規格書:

DMTH6010LK3Q-13 規格書 (PDF)

ECAD模型:

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庫存量: 1,484

庫存：: 1,484 可立即送貨

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工廠前置作業時間：: 40 週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個2500）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$76.72	NT$76.72
	NT$48.76	NT$487.60
	NT$32.70	NT$3,270.00
	NT$26.53	NT$13,265.00
	NT$23.77	NT$23,770.00
完整捲（訂購多個2500）
	NT$20.29	NT$50,725.00
	NT$20.26	NT$202,600.00

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DPAK-3 (TO-252-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	60 V
Id - C連續漏極電流:	70 A
Rds On - 漏-源電阻:	12 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	1 V
Qg - 閘極充電:	41.3 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	60 W
通道模式:	Enhancement
資格:	AEC-Q101
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Diodes Incorporated
配置:	Single
下降時間:	9.7 ns
產品類型:	MOSFETs
上升時間:	4.3 ns
系列:	DMTH6010
原廠包裝數量:	2500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	23.4 ns
標準開啟延遲時間:	5.7 ns
每件重量:	340 mg

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所選屬性: 0

篩選文檔:

規格書

DMTH6010LK3Q-13 規格書 (PDF)

PCN

Environmental Compliance (PDF)

合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

DMTH6010LK3Q N-Channel Enhancement Mode MOSFET

Diodes Inc. DMTH6010LK3Q N-Channel Enhancement Mode MOSFET is designed to meet the firm requirements of automotive applications. This MOSFET is 100% UIS (Unclamped Inductive Switching) tested in production which ensures reliable and robust end application. The DMTH6010LK3Q MOSFET is suitable for high ambient temperature environments and rated to 175°C. This MOSFET is ideal for use in engine management systems, body control electronics, and DC-DC converters. DMTH6010LK3Q MOSFET is PPAP (Production Part Approval Process) capable and is qualified to AEC-Q101 standard.